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Results 1 to 25 of 816

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ETUDE DE L'INTERACTION DE TI AVEC SIO2 PAR IDENTIFICATION DES PHASES AUX RAYONS XZHMUD ES; SHMELEV AE.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 10; PP. 1816-1820; BIBL. 19 REF.Article

LATTICE DIMENSIONS OF LOW-RATE METALLOID-STABILIZED TI5SI3.QUAKERNAAT J; VISSER JW.1974; HIGH TEMPER.-HIGH PRESS.; G.B.; DA. 1974; VOL. 6; NO 5; PP. 515-517; BIBL. 10 REF.Article

REVETEMENTS AUX SILICIURES REFRACTAIRESEVTUSHOK TM; ZHUNKOVSKIJ GL.1974; ZASHCH. POKRYT. METALL., U.S.S.R.; S.S.S.R.; DA. 1974; NO 8; PP. 58-60; H.T. 1; BIBL. 3 REF.Article

ISOLEMENT DU SILICIURE DE TITANE DANS LES NOUVEAUX ELECTROLYTESGOLUBTSOVA RB; SAVVATEEVA SM.1974; FIZ. KHIM. OBRABOT. MATER.; S.S.S.R.; DA. 1974; NO 3; PP. 125-127; BIBL. 5 REF.Article

OXIDATION OF SILICIDE THIN FILMS: TISI2D'HEURLE F; IRENE EA; TING CY et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 361-363; BIBL. 15 REF.Article

REFINEMENT OF THE CRYSTAL STRUCTURE OF TISI2 AND SOME COMMENTS ON BONDING IN TISI2 AND RELATED COMPOUNDS.JEITSCHKO W.1977; ACTA CRYSTALLOGR., B; DANEM.; DA. 1977; VOL. 33; NO 2; PP. 2347-2348; BIBL. 17 REF.Article

ETUDE DE STRUCTURE, COMPOSITION DE PHASE ET STABILITE THERMIQUE DES ALLIAGES DU SYSTEME SI-TI-MOVASIL'EVA EV; TERENT'EVA VS.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 6; PP. 1023-1026; BIBL. 4 REF.Article

TIMNSI2 AND TIFESI2 WITH NEW ORTHORHOMBIC TYPE STRUCTURESTEINMETZ J; VENTURINI G; ROQUES B et al.1982; ACTA CRYSTALLOGR., B; ISSN 0567-7408; DNK; DA. 1982; VOL. 38; NO 8; PP. 2103-2108; BIBL. 16 REF.Article

UNE FAMILLE DE SILICIURES TERNAIRES ISOTYPES DE V6SI5: (T,T')6SI5 OU T=V, CR, MN ET T'=TI, NB, TA.STEINMETZ J; ROQUES B.1977; J. LESS-COMMON METALS; NETHERL.; DA. 1977; VOL. 52; NO 2; PP. 247-258; ABS. ANGL.; BIBL. 12 REF.Article

HIGH-TEMPERATURE OXIDATION OF TITANIUM SILICIDE COATINGS ON TITANIUM = OXYDATION A HAUTE TEMPERATURE DES REVETEMENTS DE SILICIURE DE TI SUR TIABBA A; GALERIE A; CAILLET M et al.1982; OXID. MET.; ISSN 0030-770X; USA; DA. 1982; VOL. 17; NO 1-2; PP. 43-54; BIBL. 15 REF.Article

SPECTRES DES RAYONS-X ULTRAMOUS DES SILICIURES DE TI ET DE COBLOKHIN MA; MONASTYRSKIJ LM; SHVEJTSER IG et al.1973; FIZ. METALLOV METALLOVED.; S.S.S.R.; DA. 1973; VOL. 35; NO 1; PP. 213-215; BIBL. 5 REF.Serial Issue

REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTSMURARKA SP; FRASER DB; SINHA AK et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 474-482; BIBL. 16 REF.Article

DIAGRAMME DISILICIURE DE MO-DISILICIURE DE TISVECHNIKOV VN; KOCHERZINSKIJ YU A; YUPKO LM et al.1972; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1972; VOL. 206; NO 3; PP. 631-633; BIBL. 10 REF.Serial Issue

OXIDATION OF TITANIUM DISILICIDE ON POLYCRYSTALLINE SILICONJIANN RUEY CHEN; YUEN CHUNG LIU; SHENG DEH CHU et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 2; PP. 355-389; BIBL. 32 REF.Article

ETUDE DE SYSTEMES COMPLEXES A BASE DE SILICIURESDVORINA LA; KUD IV.1979; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1979; VOL. 15; NO 4; PP. 713-715; BIBL. 6 REF.Article

INVESTIGATION ON TISI2 THIN-FILM OXIDATION BY RADIOACTIVE TRACER TECHNIQUEJIANN RUEY CHEN; YUEN CHUNG LIU; SHENG DEH CHU et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 3; PP. 263-265; BIBL. 7 REF.Article

REACTION DES POUDRES DE CERTAINES PHASES DE SILICIURES DE TITANE ET DE ZIRCONIUM AVEC L'OXYGENEPOPOVA OI; SIMONOVICH LM.1978; UKRAIN. KHIM. ZH.; S.S.S.R.; DA. 1978; VOL. 44; NO 4; PP. 427-429Article

GROWTH OF TITANIUM SILICIDE ON ION-IMPLANTED SILICONREVESZ P; GYIMESI J; ZSOLDOS E et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 1860-1864; BIBL. 13 REF.Article

ELABORATION ET RESISTANCE A L'OXYDATION D'UN REVETEMENT TIN-TI5SI5 SUR LE TITANE = DEPOSITION AND OXIDATION RESISTANCE OF A TIN-TI5SI3 ON TITANIUMGANNOUNI A; GALERIE A; CAILLET M et al.1983; ANNALES DE CHIMIE (PARIS); ISSN 0003-3936; FRA; DA. 1983; VOL. 8; NO 3; PP. 191-201; BIBL. 7 REF.Article

REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTSMURARKA SP; FRASER DB; SINHA AK et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1409-1417; BIBL. 16 REF.Article

SCHOTTKY BARRIER HEIGHT MEASUREMENT BY ELECTRON-BEAM INDUCED VOLTAGEHUANG HCW; ALIOTTA CF; HO PS et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 54-56; BIBL. 10 REF.Article

OXYDATION A HAUTE TEMPERATURE DES ALLIAGES TIB2-TISI2PUGACH EH A; GOLOVKO EH I; DVORINA LV et al.1977; POROSHKOV. METALLURG., U.S.S.R.; S.S.S.R.; DA. 1977; NO 2; PP. 34-38; ABS. ANGL.; BIBL. 11 REF.Article

LATERAL GROWTH OF TITANIUM SILICIDE OVER A SILICON DIOXIDE LAYERREVESZ P; GYIMESI J; POGANY L et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 2114-2115; BIBL. 5 REF.Article

CARACTERISTIQUES THERMODYNAMIQUES DE SC5SI3, TI5SI3 ET V5SI3SYCHEV NI; GEL'D PV; KALISHEVICH GI et al.1980; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1980; VOL. 54; NO 1; PP. 224-225; BIBL. 1 REF.Article

HIGH TEMPERATURE OXIDATION OF DISILICIDES IN THE SYSTEM MOSI2-TISI2SCHLICHTING J.1978; CERAMURGIA INTERNATION.; ITA; DA. 1978; VOL. 4; NO 4; PP. 162-166; BIBL. 9 REF.Article

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